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rev.1.00, oct.30. 2003, page 1 of 11 h7n0608ld, H7N0608LS, h7n0608lm silicon n channel mos fet high speed power switching rej03g0144-0100z rev.1.00 oct.30.2003 features ? low on-resistance r ds(on) = 6.0 m ? typ. ? low drive current ? available for 4.5 v gate drive outline ldpak d g s 1. gate 2. drain 3. source 4. drain 1 2 3 4 1 2 3 4 h7n0608ld H7N0608LS 1 2 3 4 h7n0608lm
h7n0608ld, H7N0608LS, h7n0608lm rev.1.00, oct.30. 2003, page 2 of 11 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 70 a drain peak current i d (pulse) note1 280 a body-drain diode reverse drain current i dr 70 a avalanche current i ap note3 40 a avalanche energy e ar note3 137 mj channel dissipation pch note2 80 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. value at tch = 25 c, rg 50 ?
h7n0608ld, H7N0608LS, h7n0608lm rev.1.00, oct.30. 2003, page 3 of 11 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ?? 10 av gs = 16 v, v ds = 0 zero gate voltage drain current i dss ??10 av ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.5 ? 2.5 v i d = 1 ma, v ds = 10 v note1 static drain to source on state r ds(on) ?6.08.0m ? i d = 35 a, v gs = 10 v note1 resistance ? 8.0 12 m ? i d = 35 a, v gs = 4.5 v note1 forward transfer admittance |y fs | 4575? s i d = 35 a, v gs = 10 v note1 input capacitance ciss ? 6200 ? pf v ds = 10 v output capacitance coss ? 680 ? pf v gs = 0 reverse transfer capacitance crss ? 350 ? pf f = 1 mhz total gate charge qg ? 100 ? nc v dd = 25 v gate to source charge qgs ? 20 ? nc v gs = 10 v gate to drain charge qgd ? 20 ? nc i d = 70 a turn-on delay time t d(on) ?45?nsv gs = 10 v, i d = 35 a rise time t r ? 220 ? ns r l = 0.86 ? turn-off delay time t d(off) ? 125 ? ns rg = 4.7 ? fall time t f ?35?ns body?drain diode forward voltage v df ?0.94?v i f = 70 a, v gs = 0 body?drain diode reverse recovery time t rr ?40?nsi f = 70 a, v gs = 0 dif/dt = 100 a/ s notes: 1. pulse test
h7n0608ld, H7N0608LS, h7n0608lm rev.1.00, oct.30. 2003, page 4 of 11 main characteristics 160 120 80 0 50 100 150 200 0.1 0.3 1 3 10 30 100 100 80 60 40 20 0 246810 1000 300 100 30 10 1 0.3 0.03 0.01 0.1 3 ta = 25 c 10 s 100 s 1 ms 40 4.5 v 4.0 v 3.6 v 10 v 100 80 60 40 20 0 246810 ?40 c 25 c tc = 150 c v ds = 10 v pulse test v gs = 3.2 v dc operation (tc = 25 c) pw = 10 ms (1 shot) pulse test channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area gate to source voltage v gs (v) typical transfer characteristics drain current i d (a) drain to source voltage v ds (v) drain current i d (a) typical output characteristics operation in this area is limited by r ds(on)
h7n0608ld, H7N0608LS, h7n0608lm rev.1.00, oct.30. 2003, page 5 of 11 0 48 12 16 20 500 400 300 200 100 i d = 50 a 20 a 10 a 1 30 100 3 100 1 10 1000 10 3 30 300 v gs = 4.5 v 10 v 0.1 0.3 1 3 10 100 1000 300 30 10 1 3 0.3 0.1 tc = ?40 c 150 c 25 c v ds = 10 v pulse test 20 16 12 8 4 ?50 0 ?25 25 50 75 100 125 150 0 v gs = 10 v 4.5 v 50 a 10, 20 a 10, 20, 50 a 30 100 pulse test pulse test pulse test drain current i d (a) drain to source on state resistance r ds(on) (m ? ) drain to source on state resistance r ds(on) (m ? ) static drain to source on state resistance vs. drain current case temperature tc ( c) static drain to source on state resistance vs. temperature drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v)
h7n0608ld, H7N0608LS, h7n0608lm rev.1.00, oct.30. 2003, page 6 of 11 1 0.1 0.3 3 10 30 100 01020304050 100 1000 300 100 80 60 40 20 0 20 16 12 8 4 40 80 120 160 200 0 1000 100 300 30 10 1 3 0.1 0.3 3 10 100 1000 100 300 30 3 10 1 30 30 1 10 v gs = 0 f = 1 mhz ciss coss crss i d = 85 a v gs v ds v gs = 10 v, v dd = 30 v pw = 5 s, duty < 1 % rg = 4.7 ? t r t r t d(on) t d(off) t f t f 3000 10000 di / dt = 100 a / s v gs = 0, ta = 25 c v dd = 50 v 25 v 10 v v dd = 50 v 25 v 10 v reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics switching time t (ns) drain current i d (a) switching characteristics
h7n0608ld, H7N0608LS, h7n0608lm rev.1.00, oct.30. 2003, page 7 of 11 0 0.4 0.8 1.2 1.6 2.0 v gs = 0, ?5 v 10 v 5 v 100 80 60 40 20 d. u. t rg i monitor ap v monitor ds v dd 50 ? vin 15 v 0 i d v ds i ap v (br)dss l v dd e = l i 2 1 v v ? v ar ap dss dss dd 2 200 160 120 80 40 25 50 75 100 125 150 0 i ap = 40 a v dd = 25 v duty < 0.1 % rg > 50 ? pulse test source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating avalanche test circuit avalanche waveform
h7n0608ld, H7N0608LS, h7n0608lm rev.1.00, oct.30. 2003, page 8 of 11 tr td(on) vin 90% 90% 10% 10% vout td(off) 90% 10% t f 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 100 10 vin monitor d.u.t. vin 10 v r l v = 30 v ds vout monitor rg tc = 25 c d = 1 1shot pulse 0.5 0.2 0.1 0.05 0.02 0.01 dm p pw t d = pw t ch - c(t) = s (t) ? ch - c ch - c = 1.56 c/ w, tc = 25 c switching time test circuit waveform pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width
h7n0608ld, H7N0608LS, h7n0608lm rev.1.00, oct.30. 2003, page 9 of 11 package dimensions ? h7n0608ld package code jedec jeita mass (reference value) ldpak (l) ? ? 1.40 g 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ? 0.1 1.3 0.2 4.44 0.2 1.3 0.15 2.49 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ? 0.5 (1.4) 1.37 0.2 as of january, 2003 unit: mm
h7n0608ld, H7N0608LS, h7n0608lm rev.1.00, oct.30. 2003, page 10 of 11 ? H7N0608LS package code jedec jeita mass (reference value) ldpak (s)-(1) ? ? 1.30 g 10.2 0.3 1.37 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 3.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2003 unit: mm
h7n0608ld, H7N0608LS, h7n0608lm rev.1.00, oct.30. 2003, page 11 of 11 ? h7n0608lm package code jedec jeita mass (reference value) ldpak (s)-(2) ? ? 1.35 g 10.2 0.3 1.37 0.2 (2.3) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 5.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2003 unit: mm
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